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US 2006/0065953 A1Published application
Semiconductor die with protective layer and related method of processing a semiconductor wafer
AssigneeSamsung Electronics Co., Ltd.
InventorsSun-joon Kim, Hyeoung-won Seo
Life of this patent
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Abstract
A semiconductor die and a related method of processing a semiconductor wafer are disclosed in which a first interlayer insulator having a recess region of varying configuration and defining a scribe line is associated with at least one protective layer formed with a characterizing inclined side surface.
Claims38
A semiconductor die, comprising:
- a first interlayer insulator having a principal surface and a recess region containing a scribe line;
- a second interlayer insulator formed on the first insulator layer;
- a principal conductive line characterized by an inclined side surface and formed on the first and second interlayer insulators;
- and
- a protective layer formed on the inclined side surface of the principal conductive line and on at least one surface of the recess region.
2 more elements
A semiconductor die, comprising:
- a first interlayer insulator having a principal surface and a recess region defining a scribe line;
- a first conductive line formed on the principal surface of the first interlayer insulator;
- a second interlayer insulator formed on the first interlayer insulator and partially covering the first conductive line to define an exposed side surface and an exposed upper surface portion of the first conductive line;
- a second conductive line characterized by an inclined side surface and formed on the exposed side surface and exposed upper surface portion of the first conductive line;
- a first protective layer formed on the inclined side surface of the second conductive line;
- and
- a second protective layer formed on the first protective layer and on at least one surface of the first recess region, whereby a bottom surface of the second protective layer strongly adheres to the at least one surface of the recess region.
4 more elements
A semiconductor die, comprising:
- a first interlayer insulator having a principal surface, a first recess region and a second recess region, wherein the first recess region defines a scribe line, and wherein the second recess region is formed with a width greater than a width associated with the first recess region and a depth less than a depth associated with the first recess region;
- a first conductive line formed on the principal surface of the first interlayer insulator;
- a second interlayer insulator formed on the first interlayer insulator and partially covering the first conductive line to define an exposed side surface and an exposed upper surface portion of the first conductive line;
- a second conductive line characterized by an inclined side surface and formed on the exposed side surface and exposed upper surface portion of the first conductive line first;
- a first protective layer formed on the inclined side surface of the second conductive line;
- and
- a second protective layer formed on the first protective layer and on at least one surface of the first recess region and on side and bottom surfaces of the second recess region.
4 more elements
A semiconductor die, comprising:
- a first interlayer insulator comprising a principal surface, a recessed lateral surface, and a plurality of recess regions formed in the lateral surface, wherein the later surface defines a scribe line;
- a first conductive line formed on the principal surface of the first interlayer insulator;
- a second interlayer insulator formed on the first interlayer insulator and partially covering the first conductive line to define an exposed side surface and an exposed upper surface portion of the first conductive line;
- a second conductive line characterized by an inclined side surface and formed on the exposed side surface and exposed upper surface portion of the first conductive line first;
- a first protective layer formed on the inclined side surface of the second conductive line;
- and
- a second protective layer formed on the first protective layer and filling at least one of the plurality of recess regions.
4 more elements
38-60. (canceled)
Dependencies are inferred from the claim text.