InAlAsSb/InGaSb and InAlPSb/InGaSb heterojunction bipolar transistors
AssigneeThe United States of America as represented by the Secretary of the Navy
InventorsJohn Boos, Brian Bennett, Paul Campbell, Richard Magno
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Abstract
This invention pertains to heterojunction bipolar transistors containing a semiconductor substrate, a buffer layer of an antimony-based material deposited on the substrate, a sub-collector layer of an antimony-based material deposited on the buffer layer, a collector layer of an antimony-based material deposited on the sub-collector layer, a base layer of an antimony-based material deposited on the collector layer, an emitter layer of an antimony-based material deposited on the base layer, and a cap layer of an antimony-based material deposited on the emitter layer.
Claims20
An electronic device comprising a semiconductor substrate, a buffer layer deposited on said substrate, a sub-collector layer deposited on said buffer layer, a collector layer of an antimony-based material deposited on said sub-collector layer, a base layer of an antimony-based material deposited on said collector layer, an emitter layer of antimony-based material deposited on said base layer, and a cap layer deposited on said emitter layer.
Heterojunction bipolar transistor containing a semiconductor substrate, a buffer layer deposited on said substrate, a sub-collector layer deposited on said buffer layer, a collector layer of an antimony-based material deposited on said sub-collector layer, a base layer of an antimony-based material deposited on said collector layer, an emitter layer of an antimony-based material deposited on said base layer, and a cap layer deposited on said emitter layer.
Dependencies are inferred from the claim text.