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US 2006/0065951 A1Published application
Structure and method for bipolar transistor having non-uniform collector-base junction
AssigneeInternational Business Machines Corporation
InventorMarwan Khater
Life of this patent
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Abstract
A bipolar transistor is provided which includes a collector region, an intrinsic base region overlying the collector region and an emitter region overlying the intrinsic base region. An extrinsic base overlies a portion of the intrinsic base region. An epitaxial spacer layer is disposed between the collector region and the intrinsic base region in locations not underlying the emitter region.
Claims20
A bipolar transistor, comprising:
- a collector region;
- an intrinsic base region overlying said collector region;
- an emitter region overlying said intrinsic base region;
- an extrinsic base overlying a portion of said intrinsic base region;
- and
- an epitaxial spacer layer disposed between said collector region and said intrinsic base region in locations not underlying said emitter region.
3 more elements
A method of making a bipolar transistor, comprising the steps of:
- forming a collector region in a substrate;
- epitaxially growing a spacer layer over only a first portion of said collector region, leaving a second portion uncovered by said spacer layer;
- epitaxially growing an intrinsic base region over said spacer layer and said second portion of said collector region;
- forming an extrinsic base overlying a first portion of said intrinsic base region;
- and
- forming an emitter region overlying a second portion of said intrinsic base region which overlies said second portion of said collector region.
3 more elements
Dependencies are inferred from the claim text.