Semiconductor device
AssigneeSanyo Electric Co., Ltd.
InventorsTatsuhiko Koide, Yoshikazu Ibara, Koichi Saito, Daichi Suma, Reiki Fujimori
Life of this patent
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Abstract
A high performance semiconductor device including a silicon oxide film that surrounds an SiGe alloy layer, which functions as a base layer, and an n-type diffusion layer, which functions as an emitter layer. Under a polycrystalline silicon film, the silicon oxide film extends over a boundary between an active region and an element isolation film. After a flat interlayer dielectric is formed, a lead wire is connected to a silicide film located above the isolation film.
Claims16
A semiconductor device comprising:
- a semiconductor substrate;
- an element isolation film formed on the semiconductor substrate;
- an active region formed on the semiconductor substrate surrounded by the element isolation film, the active region functioning as a collector layer;
- a base layer formed on the active region;
- an emitter layer formed on the base layer;
- a first insulative film covering a side of the emitter layer and a side of the base layer;
- a conductive film contacting the emitter layer and traversing the emitter layer, the first insulative film, and the element isolation film;
- and
- a lead electrode connected to a portion of the conductive film above the element isolation film, wherein the first insulative film is formed under the conductive film so as to extend across a boundary between the active region and the element isolation film.
A semiconductor device comprising:
- a semiconductor substrate;
- an element isolation film formed on the semiconductor substrate;
- an active region surrounded by the element isolation film, the active region functioning as a collector layer and having a surface;
- a base layer formed on the active region;
- an emitter layer formed on the base layer;
- a groove formed in the surface of the active region between the base layer and the element isolation film;
- a first insulative film filling the groove;
- a second insulative film covering a side of the emitter layer and a side of the base layer;
- a conductive film contacting the emitter layer and traversing the emitter layer, the second insulative film, and the element isolation film;
- and
- a lead electrode contacting the conductive film above the element isolation film, wherein the second insulative film extends across a boundary between the first insulative film and the element isolation film under the conductive film.
A semiconductor device comprising:
- a semiconductor substrate;
- an element isolation film formed on the semiconductor substrate;
- an active region surrounded by the element isolation film, the active region functioning as a collector layer and having a surface;
- a base layer formed on the active region;
- an emitter layer formed on the base layer;
- an impurity region formed in the surface of the active region between the base layer and the element isolation film;
- an insulative film covers a side of the emitter layer and a side of the base layer;
- a conductive film contacting the emitter layer and traversing the emitter layer, the insulative film, and the element isolation film;
- and
- a lead electrode contacting the conductive film above the element isolation film, wherein the active region contains conductive impurities, the impurity region is a region formed by adding reversed conductive impurities to the active region, and the insulative film is formed under the conductive film so as to extend across a boundary between the impurity region and the element isolation film.
Dependencies are inferred from the claim text.