Semiconductor device

A semiconductor device equipped with an integrated circuit including a metal thin-film-resistor object, comprising:

• an underground insulator film having a silicon oxide film that contains one of phosphor, and phosphor and boron at least as the uppermost layer of the underground insulator film that is formed on a semiconductor substrate through another layer;
• a metal wiring pattern formed on the underground insulator film;
• and
• a sidewall consisting of an insulating material formed on a side of the metal wiring pattern;
• wherein
• the metal thin-film-resistor object is formed on the metal wiring pattern covering the underground insulator film and the sidewall.

A semiconductor device equipped with an integrated circuit including a metal thin-film-resistor object, comprising:

• an underground insulator film having a silicon oxide film that contains one of phosphor, and phosphor and boron at least as the uppermost layer of the underground insulator film that is formed on a semiconductor substrate through another layer;
• a first connection hole and a second connection hole formed in the underground insulator film;
• a first conductive plug formed inside the first connection hole;
• a second conductive plug formed inside the second connection hole, the second conductive plug being simultaneously formed with the first conductive plug;
• and
• a metal wiring pattern formed on the second conductive plug and the underground insulator film;
• wherein
• the metal thin-film-resistor object is formed on the first conductive plug and the underground insulator film.