US 2006/0065936 A1 · Multiple doping level bipolar junctions transistors and method for forming

Abstract

A process for forming bipolar junction transistors having a plurality of different collector doping densities on a semiconductor substrate and an integrated circuit comprising bipolar junction transistors having a plurality of different collector doping densities. A first group of the transistors are formed during formation of a triple well for use in providing triple well isolation for complementary metal oxide semiconductor field effect transistors also formed on the semiconductor substrate. Additional bipolar junction transistors with different collector doping densities are formed during a second doping step after forming a gate stack for the field effect transistors. Implant doping through bipolar transistor emitter windows forms bipolar transistors having different doping densities than the previously formed bipolar transistors. According to one embodiment of the present invention, bipolar junction transistors having six different collector dopant densities (and thus six different breakdown characteristics) are formed.

Claims41

Dependent claims

A process for forming a bipolar junction transistor in a semiconductor substrate, the process comprising:

forming a first doped tub region of a first dopant type within the substrate;
forming a doped sinker region of a second dopant type within the substrate;
forming second and third doped tub regions of the second dopant type in the substrate;
and
concurrently forming a subcollector region and a triple well region both of the second dopant type, wherein the triple well region and the second and the third doped tub regions cooperate to electrically isolate the first doped tub region from the substrate, and wherein the subcollector region cooperates with the doped sinker region.

2 more elements

A process for forming a bipolar junction transistor in a semiconductor substrate, the process comprising:

forming a first doped tub region of a first dopant type within the substrate;
forming a doped sinker region of a second dopant type within the substrate;
forming second and third doped tub regions of the second dopant type in the substrate;
concurrently forming a subcollector region and a triple well region both of the second dopant type, wherein the triple well region and the second and the third doped tub regions cooperate to electrically isolate the first doped tub region from the substrate, and wherein the subcollector region cooperates with the doped sinker region;
doping the subcollector region with the second dopant type;
and
doping a portion of the subcollector region with the second dopant type.

4 more elements

A process for forming bipolar junction transistors in a semiconductor substrate, the process comprising:

forming a first doped tub region of a first dopant type within the substrate;
forming first, second, third and fourth doped sinker regions of a second dopant type within the substrate;
forming second and third tub regions of the second dopant type in the substrate;
concurrently forming first, second, third and fourth subcollector regions and a triple well region all of the second dopant type, wherein the triple well region and the second and the third tub regions cooperate to electrically isolate the first doped tub region from the substrate, and wherein each one of the first, second, third and fourth subcollector region cooperates with a respective one of the first, second, third and fourth doped sinker regions;
doping the second and the fourth subcollector regions with the second dopant type;
and
doping a portion of the third and the fourth subcollector regions with the second dopant type.

4 more elements

A process for forming bipolar junction transistors in a semiconductor substrate further comprising a metal oxide semiconductor field effect transistor, the process comprising:

forming a first doped tub and a plurality of doped collector sinker regions within the substrate;
forming a second and a third doped tub within the substrate;
forming a triple well region for cooperating with the second and the third doped tubs to electrically isolate the first doped tub from the substrate and forming a first plurality of subcollector regions comprising a first doping level;
forming structures associated with the metal oxide semiconductor field effect transistor;
doping a first subset of the first plurality of subcollector regions to form a second plurality of subcollector regions while doping other regions of the substrate to form a third plurality of subcollector regions, wherein the second plurality of subcollector regions comprise a second doping level and the third plurality of subcollector regions comprise a third doping level;
and
doping a second subset of the first plurality of subcollector regions to form a fourth plurality of subcollector regions while doping a subset of the third plurality of subcollector regions to form a fifth plurality of subcollector regions and while doping a subset of the first subset of the first plurality of subcollector regions to form a sixth plurality of subcollector regions, wherein the fourth plurality of subcollector regions comprise a fourth doping level, and wherein the fifth plurality of subcollector regions comprise a fifth doping level, and wherein the sixth plurality of subcollector regions comprise a sixth doping level.

4 more elements

A process for forming bipolar junction transistors in a semiconductor substrate further comprising complimentary metal oxide semiconductor field effect transistors, the process comprising:

forming a first doped tub of a first dopant type within the substrate;
forming a second doped tub and a plurality of sinker regions of a second dopant type within the substrate;
forming third and fourth doped tubs of the second doping type in the substrate;
forming a triple well region and a first plurality of subcollector regions comprising a first doping level, wherein the triple well region and the first plurality of subcollector regions are of the second dopant type, and wherein the third and the fourth doped tubs cooperate with the triple well region to electrically isolate the first doped tub from the substrate, and wherein each one of the first plurality of subcollector regions cooperates with one of the plurality of sinker regions;
forming structures associated with the complementary metal oxide semiconductor field effect transistors after forming the triple well region and the first plurality of subcollector regions, wherein one of the structures comprises a gate for each of the complementary metal oxide semiconductor field effect transistors;
doping a first subset of the first plurality of subcollector regions to form a second plurality of subcollector regions comprising a second doping level;
doping a second subset of the first plurality of subcollector regions to form a third plurality of subcollector regions comprising a third doping level;
and
doping a subset of the second plurality of subcollector regions to form a fourth plurality of subcollector regions comprising a fourth doping level.

6 more elements

Dependencies are inferred from the claim text.

Multiple doping level bipolar junctions transistors and method for forming

Life of this patent

Multiple doping level bipolar junctions transistors and method for forming

Life of this patent

Abstract

Claims41