Electronic device and heterojunction FET
AssigneeSharp Kabushiki Kaisha
InventorJohn Twynam
Life of this patent
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Abstract
In an electronic device of the present invention a gate Schottky electrode is formed on an active layer constructed of a GaN layer and an AlGaN layer, and a source ohmic electrode and a drain ohmic electrode are further formed on both sides of the gate Schottky electrode on the active layer. A dielectric layer (TiO2 layer) of a stepwise laminate structure is formed on the AlGaN layer so that the electric field distribution between the gate Schottky electrode and the drain ohmic electrode is substantially uniformed. The dielectric constant of TiO2 of the dielectric layer is made higher than the dielectric constant of GaN and AlGaN of the active layer.
Claims24
An electronic device having an active layer, comprising:
- a plurality of electrodes formed on the active layer;
- and
- a dielectric layer formed on the active layer so that an electric field distribution between at least two of the plurality of electrodes is substantially uniformed.
A heterojunction FET comprising:
- a gate electrode formed on an active layer comprised of a semiconductor;
- a source electrode and a drain electrode formed on both sides of the gate electrode on the active layer;
- and
- a dielectric layer formed on the active layer so that an electric field distribution between at least one of the source electrode and the drain electrode and the gate electrode is substantially uniformed.
An electronic device having an active layer, comprising:
- a plurality of electrodes and a dielectric layer formed on the active layer,
- the dielectric layer having a dielectric constant ε2 higher than a dielectric constant ε1 of the active layer.
A heterojunction FET comprising:
- a gate electrode and a dielectric layer formed on an active layer comprised of a semiconductor layer;
- and
- a source electrode and a drain electrode formed on both sides of the gate electrode on the active layer,
- the dielectric layer having a dielectric constant ε2 higher than a dielectric constant ε1 of the active layer.
Dependencies are inferred from the claim text.