Method of cleaning a film-forming apparatus and film-forming apparatus
AssigneesKabushiki Kaisha Toshiba, L'Air Liquide
InventorsNaoki Tamaoki, Yuusuke Sato, Jun Sonobe, Takamitsu Shigemoto, Takako Kimura
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Abstract
A method of cleaning a film-forming apparatus to remove a silicon-based material deposited on a constituent member of the film-forming apparatus after being used to form thin films includes introducing a first gas including fluorine gas and a second gas including carbon monoxide gas into the film-forming apparatus, and heating the constituent member. The constituent member includes quartz or silicon carbide and the silicon-based material includes silicon nitride, or the constituent member includes silicon carbide and the silicon-based material includes silicon oxide.
Claims12
A method to remove a silicon-based material deposited on a constituent member of a film-forming apparatus after being used to form thin films, comprising:
- introducing a first gas comprising fluorine gas and a second gas comprising carbon monoxide gas into the film-forming apparatus;
- and
- heating the constituent member,
- wherein the silicon-based material comprises silicon nitride and the constituent member comprises quartz or silicon carbide, or
- wherein the silicon-based material comprises silicon oxide and the constituent member comprises silicon carbide.
A film-forming apparatus including a reaction chamber configured to form a silicon-based film on a wafer therein, the apparatus comprising a first gas introducing system configured to introduce a first gas comprising fluorine gas into the reaction chamber, and a second gas introducing system configured to introduce a second gas comprising carbon monoxide into the reaction chamber.
Dependencies are inferred from the claim text.