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US 2006/0051973 A1Published application
Method for forming IMD films
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsYi-Lung Cheng, Miao-Cheng Liao, Ying-Lang Wang
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Abstract
A method for forming IMD films. A substrate is provided. A plurality of dielectric films are formed on the substrate, wherein each of the dielectric layers are deposited in-situ in one chamber with only one thermal cycle.
Claims15
A method for forming dielectric layers, comprising:
- placing a substrate in a chemical deposition chamber;
- introducing a first precursor gas into the chamber while heating the substrate to an elevated temperature, thereby depositing a first dielectric layer on the substrate;
- pumping out the first precursor gas from the chamber while maintaining the substrate in the chamber at the elevated temperature;
- and
- introducing a second precursor gas to the chamber while maintaining the substrate at the elevated temperature thereby depositing a second dielectric layer on the first dielectric layer.
2 more elements
A method for forming dielectric layers, comprising the steps of:
- providing a substrate;
- and
- forming a plurality of dielectric films on the substrate, wherein each of the dielectric layers are deposited in-situ in one chamber with only one thermal cycle.
A method of forming IMD layers for a dual damascene architecture, comprising the steps of:
- placing a substrate in a CVD chamber;
- depositing a barrier layer, a lower IMD layer, a stop layer, an upper IMD layer, and an anti-reflecting layer in sequence on the substrate without moving the substrate out of the chamber,
- wherein the substrate is subjected to only one thermal cycle throughout all the depositions.
Dependencies are inferred from the claim text.