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US 2006/0051966 A1Published application
In-situ chamber clean process to remove by-product deposits from chemical vapor etch chamber
AssigneeApplied Materials, Inc.
InventorsDavid Or, Jing-Pei Chou, See-Eng Phan, Xinliang Lu, Chien-Teh Kao, Mei Chang
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Abstract
A method and apparatus for cleaning a processing chamber comprising blocking a flow of cooling fluid to a channel within a support member within a processing chamber, elevating the support member to be within about 0.1 inches of a gas distribution plate, heating the gas distribution plate, and introducing a thermally conductive gas through the gas distribution plate into the processing chamber.
Claims20
A method for cleaning a processing chamber, comprising:
- blocking a flow of cooling fluid to a channel within a support member within a processing chamber;
- elevating the support member to be within about 0.1 inches of a gas distribution plate;
- heating the gas distribution plate;
- and
- introducing a thermally conductive gas through the gas distribution plate into the processing chamber.
2 more elements
A method for cleaning a processing chamber, comprising:
- elevating a support member within a processing chamber to be within about 0.1 inches of a gas distribution plate;
- heating the gas distribution plate to about 100° C. to about 180° C.;
- and
- introducing a thermally conductive gas through the gas distribution plate into the processing chamber.
1 more element
A method for cleaning a processing chamber, comprising:
- blocking a flow of cooling fluid to a channel within a support member within a processing chamber;
- heating a gas distribution plate in communication with a processing chamber to about 100° C. to about 180° C.;
- and
- introducing a thermally conductive gas through the gas distribution plate into the processing chamber.
1 more element
Dependencies are inferred from the claim text.