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US 2006/0051944 A1Published application
Method for implanting atomic species through an uneven surface of a semiconductor layer
AssigneeS.O.I. Tec Silicon on Insulator Technologies, a French company
InventorsBruno Ghyselen, Takeshi Akatsu
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Abstract
A method for implanting atomic species through an uneven surface of a semiconductor layer. The technique includes applying a covering layer upon the uneven surface in an amount sufficient and in a manner to increase surface uniformity. The method also includes implanting atomic species through the covering layer and uneven surface to obtain a more uniform depth of implantation of the atomic species in the layer.
Claims13
A multilayer wafer comprising:
- a substrate;
- a layer having an uneven surface;
- a covering layer upon the uneven surface in an amount sufficient and in a manner to increase surface uniformity;
- and
- a uniform weakened zone formed by implantation of atomic species through the covering layer and the uneven surface, wherein the covering layer provides increased uniformity of the weakened zone compared to multilayer wafers in which atomic species are implanted through the uneven surface without the covering layer.
2 more elements
Dependencies are inferred from the claim text.