Method for manufacturing power diode and equipment for the same

Abstract

A method and equipment for manufacturing a power diode are described. More particularly, a manufacturing method and a unit of equipment used to remove an exposed portion of a P-N junction of a semiconductor (especially for power diodes) are described. The equipment has a reaction vessel having an input outlet and defining an airtight space inside. The power diode is placed inside the reaction vessel. A plasma generator is used to ionize an etching gas to produce free radicals and ions. The plasma generator is connected with the input outlet to flush the ionized etching gas into the reaction vessel. A shield plate is disposed under the input outlet of the reaction vessel to form a flow direction and a concentration distribution of the etching gas to etch a laterally exposed portion of the P-N junction.

Dependencies are inferred from the claim text.