Resist material and pattern formation method
AssigneeMatsushita Electric Industrial Co., Ltd.
InventorsMasayuki Endo, Masaru Sasago
Life of this patent
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Abstract
A resist material includes a first polymer in which part of alkali-soluble groups are protected by an acid labile group labilized by an acid; a second polymer in which substantially all alkali-soluble groups are protected by an acid labile group labilized by an acid; and an acid generator.
Claims20
A resist material comprising:
- a first polymer in which part of alkali-soluble groups are protected by an acid kabile group labilized by an acid;
- a second polymer in which substantially all alkali-soluble groups are protected by an acid labile group labilized by an acid;
- and
- an acid generator.
A resist material comprising:
- a polymer in which part of alkali-soluble groups are protected by an acid labile group labilized by an acid;
- a compound in which substantially all alkali-soluble groups are protected by an acid labile group labilized by an acid;
- and
- an acid generator.
A resist material comprising:
- a first polymer;
- a compound in which an alkali-soluble group is protected by an acid labile group labilized by an acid;
- a second polymer in which substantially all alkali-soluble groups are protected by an acid labile group labilized by an acid;
- and
- an acid generator.
A resist material comprising:
- a first polymer in which part of alkali-soluble groups are protected by an acid labile group labilized by an acid;
- a second polymer in which an alkali-soluble group is protected by an acid stable group;
- and
- an acid generator.
A resist material comprising:
- a polymer in which part of alkali-soluble groups are protected by an acid labile group labilized by an acid;
- a compound in which an alkali-soluble group is protected by an acid stable group;
- and
- an acid generator.
A resist material comprising:
- a first polymer;
- a compound in which an alkali-soluble group is protected by an acid labile group labilized by an acid;
- a second polymer in which an alkali-soluble group is protected by an acid stable group;
- and
- an acid generator.
A pattern formation method comprising the steps of:
- forming a resist film on a substrate;
- performing pattern exposure by selectively irradiating said resist film with exposing light with a liquid provided on said resist film;
- and
- forming a resist pattern by developing said resist film after the pattern exposure,
- wherein said resist film is made of a resist material including:
- a first polymer in which part of alkali-soluble groups are protected by an acid labile group labilized by an acid;
- a second polymer in which substantially all alkali-soluble groups are protected by an acid labile group labilized by an acid;
- and
- an acid generator.
A pattern formation method comprising the steps of:
- forming a resist film on a substrate;
- performing pattern exposure by selectively irradiating said resist film with exposing light with a liquid provided on said resist film;
- and
- forming a resist pattern by developing said resist film after the pattern exposure,
- wherein said resist film is made of a resist material including:
- a polymer in which part of alkali-soluble groups are protected by an acid labile group labilized by an acid;
- a compound in which substantially all alkali-soluble groups are protected by an acid labile group labilized by an acid;
- and
- an acid generator.
A pattern formation method comprising the steps of:
- forming a resist film on a substrate;
- performing pattern exposure by selectively irradiating said resist film with exposing light with a liquid provided on said resist film;
- and
- forming a resist pattern by developing said resist film after the pattern exposure,
- wherein said resist film is made of a resist material including:
- a first polymer;
- a compound in which an alkali-soluble group is protected by an acid labile group labilized by an acid;
- a second polymer in which substantially all alkali-soluble groups are protected by an acid labile group labilized by an acid;
- and
- an acid generator.
A pattern formation method comprising the steps of:
- forming a resist film on a substrate;
- performing pattern exposure by selectively irradiating said resist film with exposing light with a liquid provided on said resist film;
- and
- forming a resist pattern by developing said resist film after the pattern exposure,
- wherein said resist film is made of a resist material including:
- a first polymer in which part of alkali-soluble groups are protected by an acid labile group labilized by an acid;
- a second polymer in which an alkali-soluble group is protected by an acid stable group;
- and
- an acid generator.
A pattern formation method comprising the steps of:
- forming a resist film on a substrate;
- performing pattern exposure by selectively irradiating said resist film with exposing light with a liquid provided on said resist film;
- and
- forming a resist pattern by developing said resist film after the pattern exposure,
- wherein said resist film is made of a resist material including:
- a polymer in which part of alkali-soluble groups are protected by an acid labile group labilized by an acid;
- a compound in which an alkali-soluble group is protected by an acid stable group;
- and
- an acid generator.
A pattern formation method comprising the steps of:
- forming a resist film on a substrate;
- performing pattern exposure by selectively irradiating said resist film with exposing light with a liquid provided on said resist film;
- and
- forming a resist pattern by developing said resist film after the pattern exposure,
- wherein said resist film is made of a resist material including:
- a first polymer;
- a compound in which an alkali-soluble group is protected by an acid labile group labilized by an acid;
- a second polymer in which an alkali-soluble group is protected by an acid stable group;
- and
- an acid generator.
Dependencies are inferred from the claim text.