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AssigneeMacronix International Co., Ltd.
InventorsChih Yeh, Wen Tsai, Tao Lu
Estimating the term…
A memory cell with a charge trapping structure is operated by measuring current between the substrate region of the memory cell and at least one of the source region of the memory cell and the drain region of the memory cell. The read operation decreases the coupling between different parts of the charge trapping structure when other parts of the charge trapping structure store data that are not of interest. The sensing window of the memory cell can be greatly improved by this read operation. The memory cell is erased by increasing the net positive charge on the memory cell and programmed by increasing the net negative charge on the memory cell.
A method of operating a memory cell comprising a gate, source and drain regions in a substrate region, and including a charge trapping structure, and one or more dielectric structures at least partly between the charge trapping structure and the gate and at least partly between the substrate region and the charge trapping structure, the method comprising:
A nonvolatile memory, comprising:
A method of manufacturing nonvolatile memory, comprising:
A nonvolatile memory integrated circuit, comprising:
Dependencies are inferred from the claim text.