Method and apparatus for multi-plane MRAM
AssigneeSamsung Electronics Co., Ltd.
InventorFrederick Perner
Life of this patent
Estimating the term…
Abstract
A memory device includes a first layer of MRAM memory cells arranged in accordance with an MRAM architecture, a second layer of MRAM memory cells that is fabricated over the first layer of MRAM memory cells, and a common connection associated with the first layer of MRAM memory cells and the second layer of MRAM memory cells that facilitates operation of the memory device. The method of fabricating the memory device includes fabricating a first layer of MRAM memory cells arranged in accordance with an MRAM architecture, fabricating a second layer of MRAM memory cells over the first layer of MRAM memory cells, and fabricating a common connection associated with the first layer of MRAM memory cells and the second layer of MRAM memory cells that facilitates operation of the memory device.
Claims19
A memory device, comprising:
- a first layer of MRAM memory cells arranged in accordance with an MRAM architecture;
- a second layer of MRAM memory cells that is fabricated over the first layer of MRAM memory cells;
- and
- a common connection associated with the first layer of MRAM memory cells and the second layer of MRAM memory cells that facilitates operation of the memory device.
A memory device, comprising:
- a first layer of MRAM memory cells arranged in accordance with an MRAM architecture compatible with a BaSS memory cell string architecture;
- a second layer of MRAM memory cells that is fabricated over the first layer of MRAM memory cells and arranged in accordance with an MRAM architecture compatible with a BaSS memory cell string architecture;
- and
- a common connection associated with the first layer of MRAM memory cells and the second layer of MRAM memory cells that facilitates operation of the memory device.
A method of fabricating a memory device, comprising:
- fabricating a first layer of MRAM memory cells arranged in accordance with an MRAM architecture;
- fabricating a second layer of MRAM memory cells over the first layer of MRAM memory cells;
- and
- fabricating a common connection associated with the first layer of MRAM memory cells and the second layer of MRAM memory cells that facilitates operation of the memory device.
Dependencies are inferred from the claim text.