Sub-nanometer overlay, critical dimension, and lithography tool projection optic metrology systems based on measurement of exposure induced changes in photoresist on wafers
AssigneeZetetic Institute
InventorHenry Hill
Life of this patent
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Abstract
A method of processing a substrate on which a layer of photoresist has been applied, the method involving: exposing the layer of photoresist to radiation that carries spatial information to generate exposure-induced changes in the layer of photoresist that form a pattern having one or more features; and before developing the exposed photoresist, interferometrically obtaining measurements of the pattern in the exposed layer of photoresist for determining at least one of (1) locations of the one or more features of the pattern and (2) magnitudes of the exposure-induced changes.
Claims33
A method of processing a substrate on which a layer of photoresist has been applied, said method comprising:
- exposing the layer of photoresist to radiation that carries spatial information to generate exposure-induced changes in the layer of photoresist that form a pattern having one or more features;
- and
- before developing the exposed photoresist, interferometrically obtaining measurements of the pattern in the exposed layer of photoresist for determining at least one of (1) locations of the one or more features of the pattern and (2) magnitudes of the exposure-induced changes.
A method of processing a substrate on which a layer of photoresist has been applied, said method comprising:
- exposing the layer of photoresist to patterned radiation to generate exposure-induced changes in the layer of photoresist which form patterns having one or more features;
- and
- before developing the exposed photoresist, interferometrically obtaining measurements of the pattern in the exposed layer of photoresist for determining locations of the one or more features of the pattern.
Dependencies are inferred from the claim text.