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US 2006/0049519 A1Published application
Semiconductor device and method for manufacturing semiconductor device
AssigneeSeiko Epson Corporation
InventorTetsuya Otsuki
Life of this patent
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Abstract
A semiconductor device, comprises: a carrier substrate in which a semiconductor chip is mounted; and a land formed in the carrier substrate and arranged in a region different from the mounting face of the semiconductor chip, wherein a coarse face, the surface roughness of which is 20 through 100 μm, is formed in a bonding face of the land.
Claims6
A semiconductor device, comprising:
- a carrier substrate in which a semiconductor chip is mounted;
- and
- a land formed in the carrier substrate and arranged in a surface different from a mounting face of the semiconductor chip,
- wherein a recess is formed in a bonding face of the land.
1 more element
A semiconductor device, comprising:
- a carrier substrate in which a semiconductor chip is mounted;
- and
- a land formed in the carrier substrate and arranged in a surface different from a mounting face of the semiconductor chip,
- wherein a slit is formed in a bonding face of the land.
1 more element
A semiconductor device, comprising:
- a carrier substrate in which a semiconductor chip is mounted;
- a land formed in the carrier substrate and arranged in a surface different from a mounting face of the semiconductor chip;
- and
- a plated layer formed in a part of a bonding face of the land.
1 more element
Dependencies are inferred from the claim text.