Nickel/gold pad structure of semiconductor package and fabrication method thereof

A fabrication method of a Ni/Au pad structure of a semiconductor package, comprising the steps of:

• preparing a core layer;
• forming a conductive trace layer on the core layer;
• forming a photoresist layer to define a predetermined plating region on the conductive trace layer;
• forming a Ni/Au layer on the predetermined plating region;
• removing the photoresist layer;
• patterning the conductive trace layer to form at least one pad at a position of the Ni/Au layer, wherein an area of the pad is larger than an area of the Ni/Au layer;
• and
• applying a solder mask layer and forming at least one opening in the solder mask layer to expose the pad, wherein an area of the opening is larger than the area of the Ni/Au layer.

A fabrication method of a Ni/Au pad structure of a semiconductor package, comprising the steps of:

• preparing a core layer;
• forming a conductive trace layer on the core layer;
• patterning the conductive trace layer to form at least one pad of the conductive trace layer;
• applying a conductive layer;
• forming a photoresist layer to define a predetermined plating region on the pad, wherein an area of the predetermined plating region is smaller than an area of the pad;
• forming a Ni/Au layer on the predetermined plating region;
• removing the photoresist layer and etching away the conductive layer;
• and
• applying a solder mask layer and forming at least one opening in the solder mask layer to expose the pad, wherein an area of the opening is larger than an area of the Ni/Au layer.