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US 2006/0049484 A1Published application
Semiconductor device
AssigneeFujitsu Limited
InventorHiroshi Nomura
Life of this patent
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Abstract
The semiconductor device comprises a resistance element 26 formed of polysilicon film formed on a silicon substrate 10, which includes a resistor part 26a having a resistance value set at a prescribed value, contact parts 26b formed on both sides of the resistor part 26a and connected to a line for applying a fixed potential, and a heat radiation part 26c connected to the contact part 26b, whereby the semiconductor device can include the resistance element having a small parasitic capacitance and good heat radiation.
Claims20
A semiconductor device comprising a resistance element of a polysilicon film formed over a semiconductor substrate,
- the resistance element including a resistor part having a resistance value set at a prescribed value, a contact part formed on an end of the resistor part and connected to a line for applying a fixed potential, and a heat radiation part connected to the contact part.
Dependencies are inferred from the claim text.