High performance spin-valve transistor
AssigneeThales
InventorFrederic Nguyen Van Dau
Life of this patent
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Abstract
The invention generally relates to the field of spintronics, a branch of electronics using the magnetic spin properties of electrons. More particularly, the invention relates to the field of spin-valve transistors which can be used in numerous fields of electronics. The invention aims to propose an original arrangement for producing high-level and high-contrast collector currents simultaneously. The inventive spintronics transistor comprises a semiconductor emitter, a base forming a spin valve and a metallic connector separated from the base by an insulating deposit. The emitter/base interface constitutes a Schottky barrier and the base/collector interface constitutes a tunnel-effect barrier.
Claims9
A spin-valve transistor comprising:
- an emitter,
- a base,
- and a collector, wherein
- the emitter being made of a semiconductor material, the base comprising three successive metal layers, the first layer and the third layer being ferromagnetic, the second layer not being ferromagnetic, the interface between the emitter and the layers of the base forming a Schottky diode, wherein the collector is metallic and separated from the base by a thin insulating layer of approximately a few nanometers, said layer forming a tunnel-effect barrier between the base and said collector.
Dependencies are inferred from the claim text.