Double layer polysilicon gate electrode
OwnerChia-Lin Chen, Ming-Jie Huang +3inventors
InventorsChia-Lin Chen, Ming-Jie Huang, Chien-Hao Chen, Tze-Liang Lee, Shih-Chang Chen
Life of this patent
Estimating the term…
Abstract
A method for forming a microelectronic product and the microelectronic product resulting from the method both employ a bilayer gate electrode. The bilayer gate electrode employs: (1) a first layer formed of a random oriented polycrystalline silicon material; and (2) a second layer laminated to the first layer and formed of a columnar oriented polycrystalline silicon material. The gate electrode provides enhanced performance to a semiconductor device within which it is formed.
Claims20
A microelectronic product comprising:
- a substrate having formed thereover a polysilicon structure, the polysilicon structure comprising:
- a first layer formed of a random oriented polycrystalline silicon material;
- and
- a second layer laminated to the first layer and formed of a columnar oriented polycrystalline silicon material.
A field effect transistor comprising:
- a semiconductor substrate;
- a gate electrode formed over the semiconductor substrate, the gate electrode comprising:
- a first layer formed of a random oriented polycrystalline silicon material;
- and
- a second layer laminated to the first layer and formed of a columnar oriented polycrystalline silicon material;
- and
- a pair of source/drain regions formed into the semiconductor substrate and separated by the gate electrode.
A method for forming a semiconductor product comprising:
- providing a substrate;
- forming over the substrate a polysilicon structure comprising:
- a first layer formed of a random oriented polycrystalline silicon material;
- and
- a second layer laminated to the first layer and formed of a columnar oriented polycrystalline silicon material.
Dependencies are inferred from the claim text.