High voltage operating electrostatic discharge protection device
AssigneeMagnaChip Semiconductor, Ltd.
InventorKil-Ho Kim
Life of this patent
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AssigneeMagnaChip Semiconductor, Ltd.
InventorKil-Ho Kim
Estimating the term…
A high voltage operating electrostatic discharge protection device is provided. The high voltage operating electrostatic discharge protection device includes: a first gate structure and a second gate structure disposed on a substrate of a first conductive type with a predetermined distance; a well of the first conductive type formed in a first region of the substrate such that the well contacts one bottom portion of the first gate structure; a source region of a second conductive type formed within in the well; a counter pocket source region of the first conductive type formed within the well encompassing the source region; and a drift region of the second conductive type contacting a bottom surface of the second gate structure and formed in a second region of the substrate such that the drift region contacts the other bottom portion of the first gate structure.
A high voltage operating electrostatic discharge protection device, comprising:
Dependencies are inferred from the claim text.