Solid-state image sensor
AssigneeSanyo Electric Co., Ltd.
InventorTakayuki Kaida
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Abstract
A solid-state image sensor capable of improving detection sensitivity for an output signal is provided. This solid-state image sensor comprises a first gate electrode formed on a semiconductor substrate, a first impurity region formed on the semiconductor substrate at a first distance from the first gate electrode for receiving the signal charges and a second gate electrode formed at a second distance from the first impurity region for discharging unnecessary signal charges after extraction of a voltage signal from the first impurity region. The first distance between the first impurity region and the first gate electrode is larger than the second distance between the first impurity region and the second gate electrode.
Claims20
A solid-state image sensor comprising:
- a first gate electrode formed on a semiconductor substrate;
- a first impurity region formed on said semiconductor substrate at a first distance from said first gate electrode for receiving signal charges;
- and
- a second gate electrode formed at a second distance from said first impurity region for discharging unnecessary said signal charges after extraction of a voltage signal from said first impurity region, wherein
- said first distance between said first impurity region and said first gate electrode is larger than said second distance between said first impurity region and said second gate electrode.
Dependencies are inferred from the claim text.