Zinc-oxide-based light-emitting diode

A light-emitting zinc-oxide-based compound semiconductor device having a double-heterostructure comprising:

• a light-emitting layer having first and second major surfaces and formed of a low-resistivity, p-type Mg1-x-y Cdx Zny O;
• 0≦x<1, 0<y≦1, and x+y=0.1 to 1 compound semiconductor doped with a p-type impurity;
• a first clad layer joined to said first major surface of said light-emitting layer and formed of an n-type zinc-oxide-based compound semiconductor having a composition different from that of said compound semiconductor of said light-emitting layer;
• and
• a second clad layer joined to said second major surface of said light-emitting layer and formed of a low-resistivity p-type zinc oxide-based compound semiconductor having a composition different from that of said compound semiconductor of said light-emitting layer.

A light-emitting zinc oxide-based compound semiconductor device having a double-heterostructure comprising:

• a light-emitting layer having first and second major surfaces and formed of a low-resistivity, n-type Mg1-x-y Cdx Zny O;
• 0≦x<1, 0<y≦1, and x+y=0.1 to 1, compound semiconductor doped with an n-type impurity;
• a first clad layer joined to said first major surface of said light-emitting layer and formed of an n-type zinc-oxide-based compound semiconductor having a composition different from that of said compound semiconductor of said light-emitting layer;
• and
• a second clad layer joined to said second major surface of said light-emitting layer and formed so a low-resistivity, p-type zinc-oxide-based compound semiconductor having a composition different from that of said compound semiconductor of said light-emitting layer.

A light-emitting zinc-oxide-based compound semiconductor device having a double-heterostructure comprising:

• a light-emitting layer having first and second major surfaces and formed of a low-resistivity, Mg1-x-y Cdx Zny O;
• 0≦x<1, 0<y≦1, and x+y=0.1 to 1, compound semiconductor doped with p-type and n-type impurities;
• a first clad layer joined to said first major surface of said light-emitting layer and formed of an n-type zinc-oxide-based compound semiconductor having a composition different from that of said compound semiconductor of said light-emitting layer;
• and
• a second clad layer joined to said second major surface and formed of a low-resistivity, p-type zinc-oxide-based compound semiconductor having a composition different from that of said compound semiconductor of said light-emitting layer.