Method of growing group III nitride crystals

Abstract

In one embodiment, this invention pertains to a process for making single crystal gallium nitride in the region of the phase diagram of gallium nitride where gallium nitride is thermodynamically stable. The process includes the steps of placing a charged reaction vessel into a chamber, the reaction vessel containing a gallium nitride source and a salt-based solvent in contact therewith; heating the charge in the reaction vessel to render the solvent molten and to provide a temperature gradient in the molten solvent between the gallium nitride source and the growing single crystal gallium nitride in such a way that growing the single crystal gallium nitride will be in the region of the reaction vessel which, under operating conditions, will have a temperature near the low end of the temperature gradient and the gallium nitride source will be in the region of the reaction vessel which, under operating conditions, will have temperature near the high end of the temperature gradient; maintaining process conditions whereby the solvent is molten, with the gallium nitride from the gallium nitride source dissolving in the solvent under the impetus of the temperature gradient; precipitating gallium nitride out of the solvent; and discontinuing the heating step.

Dependencies are inferred from the claim text.