Method for achieving device-quality, lattice-mismatched, heteroepitaxial active layers
OwnerMark Wanlass, Phillip Ahrenkielinventors
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Abstract
A method is provided for achieving device-quality active layers in lattice-mismatched-heteroepitaxial systems. The method eliminates strain and dislocations resulting from lattice mismatch with respect to the substrate (12) of a heteroepitaxial active layer (14). The optimized heterostructure comprises a substrate (12), a compositionally step-graded region terminated with a buffer layer (14), an intermediate region (16), an active layer (18), and a capping layer (20). Concepts of the invention are demonstrated in douple heterostructures containing the semiconductor alloys GaxIn1-xAs and InAsyP1-y.
Claims23
A heterostructure containing the semiconductor alloys GaxIn1-xAs and InAsyP1-y for minimizing dislocations resulting from lattice mismatch of an active, heteroepitaxial layer, the heterostructure comprising:
- a semi-insulating substrate;
- a compositionally step-graded region terminated by a buffer layer;
- a intermediate region;
- an active layer;
- and
- a capping layer.
A method for eliminating strain and dislocations resulting from lattice mismatch of a heteroepitaxial layer, the method comprising:
- providing a semi-insulating substrate;
- depositing a compositionally step-graded region on the semi-insulating substrate;
- terminating the step-graded region with a buffer layer;
- depositing an intermediate region on the buffer layer;
- depositing an active layer on the buffer layer;
- and
- depositing a capping layer on the active layer.
Dependencies are inferred from the claim text.