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OwnerMichael Korzenski, Eliodor Ghenciu +2inventors
InventorsMichael Korzenski, Eliodor Ghenciu, Chongying Xu, Thomas Baum
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A photoresist cleaning composition for removing photoresist and ion implanted photoresist from semiconductor substrates. The cleaning composition contains supercritical CO2 (SCCO2) and alcohol for use in removing photoresist that is not ion-implanted. When the photoresist has been subjected to ion implantation, the cleaning composition additionally contains a fluorine ion source. Such cleaning composition overcomes the intrinsic deficiency of SCCO2 as a cleaning reagent, viz., the non-polar character of SCCO2 and its associated inability to solubilize species such as inorganic salts and polar organic compounds that are present in the photoresist and that must be removed from the semiconductor substrate for efficient cleaning. The cleaning composition enables damage-free, residue-free cleaning of substrates having photoresist or ion implanted photoresist thereon.
1-41. (canceled)
A composition comprising supercritical carbon dioxide (SCCO2), at least one alcohol, at least one fluorine source, and at least one implanted cation, wherein said cleaning composition is useful for removing ion-implanted photoresist from a microelectronic device having such material thereon.
A method of removing ion-implanted photoresist from a microelectronic device having same thereon, said method comprising contacting the ion-implanted photoresist with a cleaning composition for sufficient time and under sufficient contacting conditions to remove the ion-implanted photoresist from the microelectronic device having same thereon, wherein said cleaning composition comprises SCCO2, at least one alcohol, at least one fluorine source, and at least one implanted cation.
A method of removing ion implanted photoresist from a substrate having same thereon, said method comprising contacting the ion-implanted photoresist with a cleaning composition comprising SCCO2, alcohol and a fluorine ion source, for sufficient time and under sufficient contacting conditions to remove the ion implanted photoresist from the substrate.
A composition comprising supercritical carbon dioxide (SCCO2), at least one alcohol, and a complex formed by reacting a fluorine ion source with implanted cations, wherein said cleaning composition is useful for removing ion-implanted photoresist from a microelectronic device having such material thereon.
Dependencies are inferred from the claim text.