Method for polishing silicon carbide crystal substrate

Abstract

A method for polishing a silicon carbide crystal substrate according to the present invention includes a polishing process of polishing a silicon carbide crystal substrate having a surface roughness Rz of at most 50 μm, using an abrasive solution containing abrasive particles made of boron carbide. Accordingly, it is possible, by using boron carbide as abrasive particles instead of conventionally used diamond, to reduce the damage caused to silicon carbide crystals, which constitute the material to be polished, and to the surface of the polishing surface plate, and to perform surface polishing precisely.

Dependencies are inferred from the claim text.