Semiconductor fabrication methods and apparatus
AssigneeMicron Technology, Inc.
InventorsTerry Gilton, Li Li
Life of this patent
Estimating the term…
Loading patent…
AssigneeMicron Technology, Inc.
InventorsTerry Gilton, Li Li
Estimating the term…
Methods and apparatus for fabricating and cleaning in-process semi-conductor wafers are provided. An in-process wafer is placed within a closed chamber. A reactant gas is incorporated in a liquid solvent to form a “reactant mixture” that is capable of reacting with photoresist material for other material) on a wafer surface to facilitate removal of the material from the wafer surface. The reactant mixture is condensed on one or more of the in-process wafer surfaces to form a thin film on the surface(s) of the wafer. The solvent in the reactant mixture acts as a transport medium to place the reactant gas on the wafer surface. The reactant gas is then able to react with the photoresist material (or other material) on the in-process wafer surface to effect removal the material. Following reaction of the reactant gas with the photoresist, the thin film of reactant mixture is removed from the wafer surface by flash heating, rinsing, draining, or other suitable means.
1-15. (canceled)
A method for semiconductor wafer fabrication, the method comprising:
(canceled)
20-25. (canceled)
A method of semiconductor fabrication, the method comprising:
30-31. (canceled)
A method for removing photoresist material from a semiconductor wafer, the method comprising:
37-46. (canceled)
Dependencies are inferred from the claim text.