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US 2006/0040444 A1Published application
Method for fabricating a three-dimensional capacitor
AssigneeSamsung Electronics Co., Ltd.
InventorsJung-hyun Lee, Sung-ho Park, Sang-jun Choi
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Abstract
A capacitor and a method of fabricating the capacitor are provided herein. The capacitor can be formed by forming two or more dielectric layers and a lower electrode, wherein at least one of the two or more dielectric layers is formed before the lower electrode is formed.
Claims20
A method of fabricating a capacitor, the method comprising:
- forming two or more dielectric layers and a lower electrode, wherein at least one of the two or more dielectric layers is formed before the lower electrode is formed, and wherein the at least one of the two or more dielectric layers formed before the lower electrode is formed comprises a buffer layer comprising a Group V metal oxide;
- and
- forming an upper electrode of a platinum group metal on the two or more dielectric layers.
A three-dimensional capacitor, comprising:
- an inner electrode;
- a Group V metal oxide buffer layer on the inner electrode, wherein the buffer layer is tapered such that an upper portion of the buffer layer has a different thickness than a lower portion of the buffer layer;
- a dielectric layer of tantalum oxide disposed on the buffer layer;
- and
- an outer electrode disposed on the dielectric layer.
2 more elements
Dependencies are inferred from the claim text.