Methods of forming field effect transistors

A method of forming a field effect transistor, comprising:

• forming an insulative layer over a semiconductor substrate, the insulative layer comprising an opening therein extending to silicon comprising material;
• epitaxially growing silicon comprising material outwardly from the silicon comprising material within the opening and laterally spaced from the insulative layer within the opening, opposing spaces being provided laterally between the insulative layer and the epitaxially grown silicon comprising material, the opposing spaces comprising respective outermost portions and respective portions immediately adjacent thereto, the respective outermost portions having respective maximum lateral widths which are greater than that of the respective adjacent portions;
• forming gate dielectric material and conductive gate material within the opposing spaces, the gate dielectric material and the conductive gate material in combination filling the respective adjacent portions of the opposing spaces but not filling the respective outermost portions of the opposing spaces;
• etching at least the conductive gate material from at least a majority of the respective outermost portions of the opposing spaces;
• and
• forming source/drain regions operatively proximate the conductive gate material and using the epitixially grown silicon comprising material as a channel region of the field effect transistor.

A method of forming a field effect transistor, comprising:

• forming an insulative layer over a semiconductor substrate, the insulative layer comprising an opening therein;
• forming semiconductive material within the opening and laterally spaced from the insulative layer within the opening;
• providing the semiconductive material to have faceted outermost corner regions spaced from the insulative layer;
• forming conductive gate material over the faceted corner regions;
• etching the conductive gate material from over at least a majority of the faceted corner regions;
• and
• forming source/drain regions operatively proximate the conductive gate material and using the semiconductive material as a channel region of the field effect transistor.