Method of fabricating semiconductor device
AssigneesFurukawa Electric Co., Ltd., Mitsui Chemicals, Inc.
InventorsYumi Yamada, Akira Izumi
Life of this patent
Estimating the term…
Abstract
A protective film is formed on a surface of a semiconductor device corresponding to at least a portion that is not to be disordered, by arranging a heat source on a path through which a precursor of the protective film to be formed passes, to cause a decomposition reaction of the precursor in the presence of the heat source, and by exposing the surface of the semiconductor device to the atmosphere after the decomposition reaction. A portion to be disordered is disordered using a thermal treatment.
Claims11
A method of fabricating a semiconductor device that includes a disordered portion, the method comprising:
- forming a protective film on a surface of the semiconductor device corresponding to at least a portion that is not to be disordered, by arranging a heat source on a path through which a precursor of the protective film to be formed passes, to cause a decomposition reaction of the precursor in the presence of the heat source, and by exposing the surface of the semiconductor device to the atmosphere after the decomposition reaction;
- and
- disordering a portion to be disordered using a thermal treatment.
A method of fabricating a semiconductor device that includes a disordered portion, the method comprising:
- first forming including forming a disordering-enhancing film on a surface of the semiconductor device covering a portion to be disordered;
- second forming including forming a protective film on the surface of the semiconductor device covering at least a second portion not to be disordered, by arranging a heat source on a path through which a precursor of the protective film to be formed passes, to cause a decomposition reaction of the precursor in the presence of the heat source, and by exposing the surface of the semiconductor device to the atmosphere after the decomposition reaction;
- and
- disordering the portion to be disordered using a thermal treatment.
Dependencies are inferred from the claim text.