Semiconductor laser device and manufacturing method therefor

A method for manufacturing a semiconductor laser device comprising:

• a first step of forming compound semiconductor layers on a substrate;
• a second step of forming on the compound semiconductor layers a striped ridge portion which includes a plurality of layers, a topmost layer thereof being a contact layer;
• a third step of forming a dielectric film on the compound semiconductor layers and the ridge portion;
• a fourth step of forming a resist pattern on the dielectric film such that portions of the dielectric film present on a top face and side faces of the contact layer are exposed;
• a fifth step of removing the dielectric film exposed from the resist pattern by etching such that the top face and side faces of the contact layer are exposed;
• and
• a sixth step of forming an on-ridge electrode which is in contact with the top face and side faces of the contact layer, wherein
• in the third step, the dielectric film is formed such that a layer thickness of the contact layer is larger than a film thickness of the dielectric film present on the contact layer.