MRAM with vertical storage element in two layer-arrangement and field sensor

A magnetic memory element comprising:

• a magnetic storage element including two magnetic layers made of magnetic material, the two magnetic layers opposing each other in a parallel relationship and being vertically oriented relative to a wafer surface on which the magnetic memory element is formed, said two magnetic layers further having a magnetic anisotropy, while its magnetization vectors are magnetically coupled to at least one current line, wherein the two magnetic layers are arranged on a same side of the at least one current line;
• a magnetic sensor element comprising at least one magnetic layer having a magnetization vector being magnetically coupled to said magnetization vectors of said two magnetic layers of said magnetic storage element, said magnetic sensor element being electrically coupled to said at least one current line.

A magnetic memory element comprising:

• a magnetic storage element including two magnetic layers opposing each other in a parallel relationship and being vertically oriented relative to a wafer surface, the two magnetic layers having a magnetic anisotropy, while its magnetization vectors are magnetically coupled to at least one current line, wherein the two magnetic layers are arranged on a same side of the at least one current line;
• and
• a magnetic sensor element comprising at least one magnetic layer having a magnetization vector being magnetically coupled to the magnetization vectors of the two magnetic layers, the magnetic sensor element being electrically coupled to the at least one current line.

A magnetic random access memory comprising:

• a magnetic memory element comprising a first current line and a two-part split second current line, a magnetic storage element including two opposing magnetic layers in a parallel relationship and being vertically oriented relative to a wafer surface, the two magnetic layers having a magnetic anisotropy, while its magnetization vectors are magnetically coupled to at least one current line, the two magnetic layers are arranged on a same side of the at least one current line, and the two magnetic layers are arranged in between the two-part split second current line, and a magnetic sensor element comprising at least one magnetic layer having a magnetization vector being magnetically coupled to the magnetization vectors of the two magnetic layers of the magnetic storage element.