MRAM with magnetic via for storage of information and field sensor

A magnetic memory element comprising:

• a magnetic via for storing information made of a magnetic material and being vertically oriented relative to a wafer surface, the magnetic via having a magnetic anisotropy with its magnetization vector being magnetically coupled to at least one current line;
• and
• a magnetic sensor element for sensing magnetization of the magnetic via comprising at least one magnetic layer having a magnetization vector being magnetically coupled to the magnetization vector of the magnetic via, the magnetic sensor element being conductively connected to the at least one current line, wherein the magnetic sensor element is a magnetic tunnel junction comprising two magnetic layers of magnetic material stacked in parallel, overlying relationship and separated by a layer of nonmagnetic material.

A magnetic random access memory device comprising:

• a plurality of magnetic memory elements, at least one memory element including a magnetic via for storing information made of a magnetic material and being vertically oriented relative to a wafer surface, the magnetic via having a magnetic anisotropy with its magnetization vector being magnetically coupled to at least one current line, and a magnetic sensor element for sensing magnetization of the magnetic via comprising at least one magnetic layer having a magnetization vector being magnetically coupled to the magnetization vector of the magnetic via, the magnetic sensor element being conductively connected to the at least one current line.