Metallization performance in electronic devices
AssigneeAgere Systems Inc.
InventorsJohn Desko, Bailey Jones, Sean Lian, Simon Molloy, Vivian Ryan
Life of this patent
Estimating the term…
Abstract
Phenomena such as electromigration and stress-induced migration occurring in metal interconnects of devices such as integrated circuits are inhibited by use of underlying non-planarities. Thus the material underlying the interconnect is formed to have non-planarities typically of at least 0.02 μm in height and advantageously within 100 μm of another such non-planarity. Such non-planarities, it is contemplated, reduce grain boundary movement in the overlying interconnect with a concomitant reduction in void aggregation.
Claims27
An electronic device having design rule of 0.9 μm or finer comprising 1) an electrical interconnect comprising a metal having two transverse edges and 2) a material underlying said electrical interconnect wherein the surface of said material includes non-planarities having a height of at least 0.02 μm such that at least 80 percent of the distances between nearest neighbors of said non-planarities that are within 0.1 μm of at least one of said transverse edges of said interconnect is about 100 μm or less.
An integrated circuit including an electronic device having design rule of 0.9 μm or finer comprising 1) an electrical interconnect comprising a metal having two transverse edges and 2) a material underlying said electrical interconnect wherein the surface of said material includes non-planarities having a height of at least 0.02 μm such that at least 80 percent of the distances between nearest neighbors of said non-planarities that are within 0.1 μm of at least one of said transverse edges of said interconnect is about 100 μm or less.
A wafer including an electronic device having design rule of 0.9 μm or finer comprising 1) an electrical interconnect comprising a metal having two transverse edges and 2) a material underlying said electrical interconnect wherein the surface of said material includes non-planarities having a height of at least 0.02 μm such that at least 80 percent of the distances between nearest neighbors of said non-planarities that are within 0.1 μm of at least one of said transverse edges of said interconnect is about 100 μm or less.
Dependencies are inferred from the claim text.