Trench isolation structure and method of formation

A method of forming a trench isolation region in a semiconductor substrate, said method comprising:

• forming a first doped region of a first doping concentration of a first conductivity type in a semiconductor substrate;
• forming a second doped region within said first doped region having a second doping concentration higher than said first doping concentration of said first conductivity type;
• and
• forming a trench isolation region at least in a portion of said second doped region of said substrate such that at least one sidewall of said trench isolation region is formed adjacent to said second doped region.

A processor system, comprising:

• a processor;
• and
• at least one integrated circuit coupled to said processor, wherein said at least one integrated circuit and processor further comprising a semiconductor device with at least one trench isolation region, said semiconductor device comprising:
• a substrate having a first doped region of a first doping concentration of a first conductivity type;
• a second doped region within said first doped region having a second doping concentration higher than said first doping concentration of said first conductivity type;
• and
• a trench isolation region formed at least in a portion of said second doped region of said substrate such that at least one sidewall of said trench isolation region is adjacent said second doped region.

A method of fabricating an integrated circuit having a plurality of active regions separated by trench isolation regions, said method comprising:

• forming a plurality of first doped regions in a semiconductor substrate, said first doped regions being implanted with ions of a first conductivity type and having a first dopant concentration;
• forming a plurality of second doped regions in said plurality of first doped regions having a second dopant concentration higher than said first dopant concentration;
• forming a plurality of trench isolation regions in said plurality of second doped regions having a bottom portion and sidewalls, wherein each trench isolation region has at least one sidewall being formed adjacent to the second doped region;
• and
• filling said trench isolation region with a dielectric material.

An imaging device comprising:

• at least one trench isolation region provided at least in a portion of a substrate, said at least one trench isolation region having at least one sidewall adjacent to a first doped region, said first doped region having a first conductivity type and a first dopant concentration;
• a second doped region having said first conductivity type surrounding at least a portion of said trench isolation region and said first doped region, said second doped region having a second dopant concentration, said first dopant concentration being greater than said second dopant concentration;
• and
• a photosensor formed adjacent to said first doped region.

A method of forming an imaging device, said method comprising:

• forming a first doped region of a first doping concentration of a first conductivity type in a semiconductor substrate;
• forming a second doped region within said first doped region having a second doping concentration higher than said first doping concentration of said first conductivity type;
• forming a trench isolation region at least in a portion of said second doped region of said substrate such that at least one sidewall of said trench isolation region is formed adjacent to said second doped region;
• and
• forming a photosensor adjacent to said at least one sidewall of said trench isolation region.

A method of forming an imaging structure, said method comprising:

• forming at least a portion of a trench isolation region in a first doped region with a first conductivity type and a first dopant concentration, said trench isolation region is formed to have at least one trench sidewall formed adjacent to said first doped region, wherein at least a portion of said first doped region is surrounded by a second doped region of the first conductivity type having a second dopant concentration, said first dopant concentration being greater than said second dopant concentration;
• forming a third doped region with a second conductivity type formed at least partially adjacent to said trench isolation region;
• and
• forming a photosensor adjacent first doped region.

A processing system comprising:

• (i) a processor;
• and (ii) an imaging device coupled to said processor, said imaging device comprising:
• at least one trench isolation region provided at least in a portion of a substrate, said at least one trench isolation region having at least one sidewall adjacent to a first doped region, said first doped region having a first conductivity type and a first dopant concentration;
• a second doped region having said first conductivity type surrounding at least a portion of said trench isolation region and said first doped region, said second doped region having a second dopant concentration, said first dopant concentration being greater than said second dopant concentration;
• and
• a photosensor formed adjacent to said first doped region.