Semiconductor device
AssigneeNEC Electronics Corporation
InventorIchiro Yamamoto
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Abstract
A P-type MOSFET 120 includes a semiconductor substrate (N-well 102b); a gate insulating film formed on the semiconductor substrate, composed of a high-dielectric-constant film 108 which contains a silicate compound containing a first element selected from the group consisting of Hf, Zr and any of lanthanoids, together with N; a gate electrode formed on the gate insulating film, and is configured by a polysilicon film 114 containing a P-type impurity; and a blocking oxide film 110 formed between the gate insulating film and the gate electrode, blocking a reaction between the first element and the polysilicon film 114, and having a relative dielectric constant of 8 or above.
Claims20
A semiconductor device comprising:
- a semiconductor substrate;
- a gate insulating film formed on said semiconductor substrate, composed of a high-dielectric-constant film which contains a silicate compound containing a first element selected from the group consisting of Hf, Zr and any of lanthanoids, together with N;
- a gate electrode formed on said gate insulating film, and is configured by a polysilicon film containing a P-type impurity;
- and
- a blocking oxide film formed between said gate insulating film and said gate electrode, blocking a reaction between said first element and said polysilicon film, and having a relative dielectric constant of 8 or above.
A semiconductor device comprising:
- a semiconductor substrate;
- a gate insulating film formed on said semiconductor substrate, composed of a high-dielectric-constant film which contains a silicate compound containing a first element selected from the group consisting of Hf, Zr and any of lanthanoids, together with N;
- a gate electrode formed on said gate insulating film, and is configured by a polysilicon film containing a P-type impurity;
- and
- a blocking oxide film formed between said gate insulating film and said gate electrode, configured by using a material having a negative fixed charge, and having a relative dielectric constant of 8 or above.
Dependencies are inferred from the claim text.