Magnetic memory with static magnetic offset field
AssigneesInfineon Technologies AG, Altis Semiconductor
InventorsRainer Leuschner, Daniel Braun, Gill Yong Lee, Ulrich Klostermann
Life of this patent
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Abstract
A magnetoresistive or magnetic memory element and a magnetic random access memory having one or more magnetic memory elements. The memory element includes a magnetic tunnel junction including first and a second magnetic layers. The first magnetic layer having a free magnetization. The free magnetization of the first magnetic layer is magnetically coupled to a first current line and a second current line for switching the free magnetization, and a mechanism for applying a static magnetic offset field in the direction of at least one of the first and second current lines.
Claims20
A magnetoresistive memory element comprising:
- a magnetic tunnel junction including a first magnetic layer and a second magnetic layer made of magnetic material stacked in a parallel, overlying relationship and separated by a layer of nonmagnetic material, the second magnetic layer being provided with a magnetically fixed magnetization, while the first magnetic layer being provided with a free magnetization being free to be switched between the same and opposite directions with respect to the fixed magnetization direction of the second magnetic layer, the free magnetization of said first magnetic layer being magnetically coupled to a first current line and a second current line for switching said free magnetization;
- and
- at least one mechanism for applying a static magnetic offset field in the direction of at least one of said first current line and second current line.
A magnetic random access memory chip comprising:
- a plurality of magnetic memory elements, each of which comprising a magnetic tunnel junction including first and a second magnetic layers made of magnetic material stacked in parallel, overlying relationship and separated by a layer of nonmagnetic material, the second magnetic layer being provided with a magnetically fixed magnetization, while the first magnetic layer being provided with a free magnetization being free to be switched between the same and opposite directions with respect to the fixed magnetization direction of the second magnetic layer, the free magnetization of the first magnetic layer being magnetically coupled to a first current line and a second current line for switching the free magnetization;
- and a magnetic shielding layer in a chip packaging for applying a static magnetic offset field in the direction of at least one of the first and second current lines.
A process for making a magnetic memory including the preparation of a ferromagnetic liner having a substantially U-shaped cross-sectional profile comprising:
- forming a trench;
- depositing a liner material;
- filling the trench with a photoresist;
- exposing with a mask with lines running perpendicular to the direction of the trench, to make discrete elements out of the ferromagnetic liner;
- developing the photoresist;
- etching out of the liner material in the resist trenches;
- removal of the photoresist;
- and
- filling of the trenches with conductive material lines.
A magnetic memory comprising:
- a magnetic tunnel junction;
- a first current line and a second current line;
- and
- at least one mechanism for applying a static magnetic offset field in the direction of at least one of the first current line and the second current line, wherein the mechanism for applying a static magnetic offset field comprises at least one ferromagnetic liner made of ferromagnetic material adjacent at least one of the first and second current lines, the ferromagnetic liner having a magnetic anisotropy along the direction of the at least one of the first and second current lines
Dependencies are inferred from the claim text.