CMOSFET with hybrid strained channels
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorWen-Chin Lee
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Abstract
Disclosed is a method of manufacturing microelectronic devices including forming a silicon substrate with first and second wells of different dopant characteristics, forming a first strained silicon-germanium-carbon layer of a first formulation proximate to the first well, and forming a second strained silicon-germanium-carbon layer of a second formulation distinct from the first formulation proximate to the second well. Capping and insulating layers, gate structures, spacers, and sources and drains are then formed, thereby creating a CMOS device with independently strained channels.
Claims24
A microelectronic device comprising:
- a silicon substrate with first and second wells of different dopant characteristics;
- a first strained silicon-germanium-carbon layer of a first formulation proximate to the first well;
- and
- a second strained silicon-germanium-carbon layer of a second formulation distinct from the first formulation proximate to the second well.
A microelectronic device comprising:
- a substrate with wells of different dopant characteristics;
- a first strained tri-elemental layer of a first formulation epitaxially grown over one well;
- and
- a second strained tri-elemental layer of a second formulation distinct from the first formulation epitaxially grown over a different well.
An integrated circuit device comprising:
- a plurality of microelectronic devices located at least partially in a silicon substrate having first and second wells of different dopant characteristics wherein at least one of the plurality of microelectronic devices comprises:
- a first strained silicon-germanium-carbon layer of a first formulation proximate to the first well;
- and
- a second strained silicon-germanium-carbon layer of a second formulation different from the first formulation proximate to the second well.
A method of manufacturing a microelectronic device comprising:
- forming a silicon substrate with first and second wells of different dopant characteristics;
- forming a first epitaxial silicon-germanium-carbon layer of a first formulation proximate to the first well;
- and
- forming a second epitaxial silicon-germanium-carbon layer of a second formulation distinct from the first formulation proximate to the second well.
A method of manufacturing a microelectronic device sequentially comprising:
- forming a silicon substrate with first and second wells of different dopant characteristics;
- forming an epitaxial layer of a first formulation over the first and second wells;
- masking a first portion of the epitaxial layer overlying the first well;
- modifying a second portion of the epitaxial layer overlying the second well to a second formulation.
Dependencies are inferred from the claim text.