Back to results
US 2006/0038186 A1Published application
Light-emitting diode and its manufacturing method
AssigneeSharp Kabushiki Kaisha
InventorsKazuaki Sasaki, Junichi Nakamura
Life of this patent
Estimating the term…
Abstract
It is an object of the present invention to provides the light emitting diode having a light emitting part of an AlGaInP type, and having a current diffusion layer which includes In on a light emitting side of the light emitting part, so that the generation of hillocks is effectively inhibited and the brightness of the light emitting diode is increased.
Claims4
1-15. (canceled)
A method for manufacturing a light emitting diode having a light emitting part of an AlGaInP type, the method comprising a step of forming a current diffusion layer made of AlGaInAs on a light emitting side of the light emitting part.
Dependencies are inferred from the claim text.