Polymer memory device with variable period of retention time
AssigneeSpansion LLC
InventorsAaron Mandell, Michael VanBuskirk, Stuart Spitzer, Juri Krieger
Life of this patent
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Abstract
Systems and methodologies are provided for of enabling a polymer memory cell to exhibit variable retention times for stored data therein. Such setting of retention time can depend upon a programming mode and/or type of material employed in the polymer memory cell. Short retention times can be obtained by programming the polymer memory cell via a low current or a low electrical field. Similarly, long retention times can be obtained by employing a high current or electrical field to program the polymer memory cell.
Claims23
A polymer memory cell comprising:
- an active layer that changes an impedance state based on a migration of charges therefrom when subject to at least one of an external electric field and an electric current, and
- a passive layer that facilitates supply of charges to the active layer, the passive layer and the active layer transfer charges therebetween to provide a variable retention time for data stored in the polymer memory cell.
A memory device comprising:
- a plurality of polymer memory cells with each polymer memory cell comprising:
- an active layer that changes an impedance state based on a migration of charges therefrom,
- a passive layer that facilitates supply of charges to the active layer, and a group of polymer memory cells exhibit DRAM retention capabilities, and a further group of polymer memory cells exhibit flash retention capabilities.
A method of providing a variable retention time for a memory cell comprising:
- providing a memory cell comprising an active and a passive layer that are sandwiched between electrodes;
- forming metal ions or metal charged molecules within the active layer via at least one of an initialization process and a post treatment process;
- and
- changing an impedance state associated with the memory cell to induce a predetermined retention time therein.
A memory cell comprising:
- means for forming metal ions or metal charged molecules in an active layer of the memory cell;
- and
- means for inducing a variable data retention time in the active layer.
Dependencies are inferred from the claim text.