Apparatus for ion implantation
AssigneeDongbu Electronics Co., Ltd.
InventorMoon-Woo Shin
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Abstract
Apparatus for ion implantation having an ion trap for stabilizing a beam current are disclosed. An illustrated apparatus for ion implantation includes an arc chamber to ionize an impurity to create an ion beam; an ion beam trapping device to extract the ion beam from the arc chamber and to temporarily trap the extracted ion beam; an ion beam extracting and accelerating electrode to extract and accelerate the trapped ion beam of the ion beam trapping device; and an end station to hold a wafer in which the impurity is to be implanted.
Claims4
An apparatus for ion implantation comprising:
- an arc chamber to ionize an impurity to create an ion beam;
- an ion beam trapping device to extract the ion beam from the arc chamber and to temporarily trap the extracted ion beam;
- an ion beam extracting and accelerating electrode to extract and accelerate the trapped ion beam of the ion beam trapping device;
- and
- an end station to hold a wafer in which the impurity is to be implanted.
An apparatus for ion implantation comprising:
- an arc chamber to ionize an impurity to generate an ion beam;
- a beam current buffer to temporarily trap the ion beam;
- an end station to hold a wafer;
- and
- an electrode to transfer the ion beam from the beam current buffer toward the end station.
Dependencies are inferred from the claim text.