Furnace purification and metal fluoride crystals grown in a purified furnace
AssigneeCorning Incorporated
InventorsMichele Fredholm, Jeffrey Kohli, Nicholas LeBlond, Alexandre Mayolet, Viktoria Pshenitsyna, Pawan Saxena, Paul Schermerhorn
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Abstract
The invention is directed to a method for growing metal fluoride crystals suitable for use in below 200 nm optical lithography systems, the method comprising including at least the step of heating a crystal growth furnace to a temperature in the range of 1400-2000° C. to purify the furnace by removal of sulfur and chlorine prior to using the furnace for growing metal fluoride single crystals.
Claims20
1-14. (canceled)
A method for growing metal fluoride single crystals in a crystal growth furnace, the method comprising the steps of:
- of placing a vessel containing a metal fluoride feedstock into a crystal growth furnace;
- heating the feedstock to a temperature above the melting point of the feedstock;
- and
- cooling the melted feedstock to form a metal fluoride single crystal, wherein,
- prior to placing a metal fluoride feedstock into the furnace to grow the crystals, the furnace is purified at a temperature in the range that is above the melting point of the metal fluoride crystal that is to be grown in the furnace, said purification for a time of at least 12 hours.
A method for growing a metal fluoride single crystal in a furnace, said method comprising the steps of:
- evacuating to at least 10−5 Torr a furnace suitable growing metal fluoride single crystals,
- heating the furnace to a temperature in the range of 1400-2000° C. with continuous application of vacuum and holding the furnace temperature in that range for a time of at least 12 hours;
- cooling the furnace to a temperature of 1400-1500° C.;
- admitting a selected gas into the furnace and holding the temperature of 1400-1500° C. for a time of at least 4 hours;
- evacuating the furnace to at least 10−6 Torr;
- cooling the furnace to ambient temperature;
- admitting a dry, inert gas into the furnace;
- placing at least one vessel containing a metal fluoride feedstock into the furnace;
- and
- heating, melting and cooling the melted feedstock to thereby grow a metal fluoride single crystal.
A high-purity metal fluoride crystal, said crystal being made by a method comprising the steps of:
- evacuating to at least 10−5 Torr a furnace suitable growing metal fluoride single crystals, heating the furnace to a temperature in the range of 1400-2000° C. with continuous application of vacuum and holding the furnace temperature in that range for a time of at least 12 hours;
- cooling the furnace to a temperature of 1400-1500° C.;
- admitting a selected gas into the furnace and holding the temperature of 1400-1500° C. for a time of at least 4 hours;
- evacuating the furnace to at least 10−6 Torr;
- cooling the furnace to ambient temperature;
- admitting a dry, inert gas into the furnace;
- placing at least one vessel containing a metal fluoride feedstock into the furnace;
- and
- heating, melting and cooling the melted feedstock to thereby grow a metal fluoride single crystal;
- wherein said metal of said metal fluoride crystal is selected from the group consisting of calcium, barium, magnesium and strontium, or a mixture of any of the foregoing.
Dependencies are inferred from the claim text.