Single crystal and quasi-single crystal, composition, apparatus, and associated method
AssigneeGeneral Electric Company
InventorsMark D'Evelyn, Dong-Sil Park, Victor Lou, Thomas McNulty
Life of this patent
Estimating the term…
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AssigneeGeneral Electric Company
InventorsMark D'Evelyn, Dong-Sil Park, Victor Lou, Thomas McNulty
Estimating the term…
A single crystal or quasi-single crystal including one or more Group III material and an impurity. The impurity includes one or more elements from Group IA, Group IIA, Groups IIIB to VIIB, Group VIII, Group IB, Group IIB, or Group VIIA elements of the periodic table of elements. A composition for forming a crystal is also provided. The composition includes a source material comprising a Group III element, and a flux comprising one or more of P, Rb, Cs, Mg, Ca, Sr, Ba, Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Y, Zr, Nb, Mo, Pd, Ag, Hf, Ta, W, Pt, Au, Hg, Ge, or Sb; or the flux may comprise a rare earth metal.
A single crystal or quasi-single crystal, comprising one or more Group III material and an impurity, wherein
A composition for forming a crystal, comprising:
A single crystal or quasi-single crystal, comprising:
Dependencies are inferred from the claim text.