Contacting structure for a semiconductor material and a method for providing such structures

A semiconductor device in which complementary charge carriers are required for proper operation of the semiconductor device, the semiconductor device comprising:

• a contact structure, wherein the contact structure comprises:
• a layer of semiconductor material having an interface;
• and
• an electrical contact at said interface of said layer of semiconductor material, the electrical contact comprising a granular metal.

A method for producing an electrical contact at an interface of a semiconductor material, the method comprising:

• providing a substrate;
• producing a granular metal on at least part of the substrate;
• the granular metal comprising a cluster of metal islands extending essentially in a two-dimensional plane;
• and
• depositing a layer of a semiconductor material on top of the substrate and the cluster of metal islands.

A method for producing an electrical contact at an interface of a semiconductor material, the method comprising:

• providing a substrate;
• depositing a layer of a semiconductor material on top of the substrate, the layer of semiconductor material having an interface;
• and
• producing a granular metal on at least part of the layer of semiconductor material, the granular metal comprising metal islands extending essentially in a two-dimensional plane in direction parallel with the interface.