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US 2006/0033204 A1Published application
Method of creating shielded structures to protect semiconductor devices
AssigneeIntel Corporation
InventorsDavid Fraser, Brian Doyle
Life of this patent
Estimating the term…
Abstract
An apparatus on a wafer, comprising; a first metal layer of a wall, a second metal layer of the wall, a third metal layer of the wall comprising; one or more base frames, a fourth metal layer of the wall comprising; one or more vertical frame pairs each on top of the one or more base frames and having a pass-thru therein, a fifth metal layer of the wall comprising; one or more top frames each over the pass-thru; and a metal lid.
Claims16
1-37. (canceled)
An apparatus comprising:
- a Faraday cage that encloses an at least one semiconductor device on a monocrystalline silicon substrate within a structure of metal that has an at least one vertical metal wall.
An apparatus comprising:
- an at least one semiconductor device on a monocrystalline silicon substrate;
- an at least one patterned insulating layer positioned over the at least one semiconductor device;
- an at least one metal layer positioned over the at least one insulating layer such that the at least one metal layer forms a first metal cage that encloses the at least one semiconductor device and has at least one vertical metal wall.
Dependencies are inferred from the claim text.