Semiconductor device with sidewall wiring

A semiconductor device comprising:

• a semiconductor die;
• a first insulation film formed on a front surface of the semiconductor die;
• a first wiring layer formed on the first insulation film so that part of a bottom surface of the first wiring layer is in contact with the first insulation film;
• a second insulation film comprising a side film and a back film, the side film being disposed on an outside sidewall of the semiconductor die and the back film being disposed on a back surface of the semiconductor die;
• a second wiring layer formed on the side film and the back film so that an edge of the second wiring layer is in contact with another part of the bottom surface of the first wiring layer;
• a third insulation film formed on the second wiring layer;
• and
• a conductive terminal formed on the second wiring layer.