Low-density, high-resistivity titanium nitride layer for use as a contact for low-leakage dielectric layers and method of making
AssigneeMatrix Semiconductor, Inc.
InventorS. Herner
Life of this patent
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Abstract
A low-density, high-resistivity layer of a PVD sputter-deposited material, preferably titanium nitride, when coupled with a dielectric, makes a superior low-leakage insulating barrier for use in semiconductor devices. The material is created by sputtering methods that cause the ions to strike the deposition surface with reduced energy, for example in an ion metal plasma chamber with no self-bias accelerating ions normal to the deposition surface, or in a standard PVD chamber with pressure increased.
Claims19
A method for forming titanium nitride in a semiconductor device comprising:
- providing a surface for a semiconductor device;
- and
- depositing a film of titanium nitride on the surface by physical vapor deposition wherein, for any portion of the film more than about 20 angstroms thick, the density of the titanium nitride is less than about 4.0 grams per cubic cm.
A method for making a thin film transistor comprising:
- forming a polysilicon layer;
- forming a silicon dioxide layer in contact with the polysilicon layer;
- forming a titanium nitride layer in contact with the silicon dioxide layer wherein, for any portion of the titanium nitride layer more than about 20 angstroms thick, the resistivity of the titanium nitride is greater than about 300 microOhm-cms and the density of the titanium nitride is less than about 4.25 grams per cubic cm;
- and
- patterning and etching the titanium nitride.
A method for forming titanium nitride in a semiconductor device comprising:
- providing a surface for a semiconductor device;
- and
- depositing on the surface a film of titanium nitride by physical vapor deposition wherein, for any portion of the film more than about 20 angstroms thick, the deposition is performed with substantially no self-bias and with pressure greater than about 15 mTorr.
A method for forming titanium nitride for use in a semiconductor device comprising:
- providing a surface for a semiconductor device;
- on the surface, depositing titanium nitride wherein, for any portion of the titanium nitride layer more than about 20 angstroms thick, the resistivity of the titanium nitride is greater than about 300 microOhm-cms and the ratio of nitrogen to titanium is greater than about 1.2:1.
Dependencies are inferred from the claim text.