Semiconductor device

Abstract

Provided is a semiconductor device having a semiconductor integrated circuit formed on an SOI substrate, in which a bleeder resistor is formed of a single-crystal-silicon device-forming layer, and an upper electrode for resistance fixation is formed over the bleeder resistor and on a thin oxide film and is fixed to the identical potential as that of the bleeder resistor located below the electrode. Further, an impurity diffusion region is formed on the silicon substrate, and is fixed to the identical potential as that of the bleeder resistor above the impurity diffusion region. In addition, those three elements; the upper electrode for resistance fixation, the bleeder resistor, and the lower impurity diffusion region are collectively and electrically connected with one another through a conductor filling a contact hole for potential fixation.

Dependencies are inferred from the claim text.